V. V. Bakin

Semiconductor surfaces with negative electron affinity

V. V. Bakin, A. A. Pakhnevich, A. G. Zhuravlev et al. · e-Journal of Surface Science and Nanotechnology · 2007 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Semiconductor Physics +17

p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer

V. V. Bakin, K. V. Toropetsky, H. E. Scheibler et al. · Applied Physics Letters · 2015 · 21 citations · Full text

Electrical Engineering, Several Photocathode Parameters, Activation Layer +10

Cooled Transmission-Mode NEA-Photocathode with a Band-Graded Active Layer for High Brightness Electron Source

L. B. Jones, S. A. Rozhkov, V. V. Bakin et al. · AIP conference proceedings · 2009 · 20 citations

Optical Materials, Engineering, Laser Physics +23

Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity

A. A. Pakhnevich, V. V. Bakin, A. V. Yaz’kov et al. · Journal of Experimental and Theoretical Physics Letters · 2004 · 19 citations

Emission of ballistic photoelectrons from p-GaN(Cs,O) with the effective negative electron affinity

A. A. Pakhnevich, V. V. Bakin, G. É. Shaĭbler et al. · Physics of the Solid State · 2007 · 14 citations