H. E. Scheibler

Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen

D. A. Orlov, C. Krantz, Alexander Wolf et al. · Journal of Applied Physics · 2009 · 377 citations

Engineering, Thermal Dissociation, Vacuum Device +16

Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance

V. L. Alperovich, A. S. Jaroshevich, H. E. Scheibler et al. · Solid-State Electronics · 1994 · 49 citations

Ii-vi Semiconductor, Photonics, Electrical Engineering +10

Semiconductor surfaces with negative electron affinity

V. V. Bakin, A. A. Pakhnevich, A. G. Zhuravlev et al. · e-Journal of Surface Science and Nanotechnology · 2007 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Semiconductor Physics +17

Evolution of electronic properties at the <i>p</i>-GaAs(Cs,O) surface during negative electron affinity state formation

V. L. Alperovich, H. E. Scheibler, A. S. Terekhov · Applied Physics Letters · 1995 · 24 citations

Surface Band Bending, Engineering, Photoreflectance Spectroscopy +19

p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer

V. V. Bakin, K. V. Toropetsky, H. E. Scheibler et al. · Applied Physics Letters · 2015 · 21 citations · Full text

Electrical Engineering, Several Photocathode Parameters, Activation Layer +10