V. L. Alperovich

Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution

V. L. Alperovich, N.S. Rudaya, D. V. Sheglov et al. · Applied Surface Science · 2004 · 69 citations

Semiconductors, Hcl-isopropanol Solution, Electrical Engineering +9

Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance

V. L. Alperovich, A. S. Jaroshevich, H. E. Scheibler et al. · Solid-State Electronics · 1994 · 49 citations

Ii-vi Semiconductor, Photonics, Electrical Engineering +10

The influence of phonons and impurities on the broadening of excitonic spectra in gallium arsenide

V. L. Alperovich, V. M. Zaletin, A. F. Kravchenko et al. · physica status solidi (b) · 1976 · 39 citations

Engineering, Broadening Parameter, Spectroscopic Property +18

Photon-enhanced thermionic emission from <i>p</i>-GaAs with nonequilibrium Cs overlayers

A. G. Zhuravlev, Alexey S. Romanov, V. L. Alperovich · Applied Physics Letters · 2014 · 33 citations

Engineering, Semiconductors, Cesium Deposition +16

Domination of adatom-induced over defect-induced surface states on<i>p</i>-type GaAs(Cs,O) at room temperature

V. L. Alperovich, A. S. Terekhov · Physical review. B, Condensed matter · 1994 · 32 citations

Surface Band Bending, Engineering, Semiconductor Device +18