Single scan defect identification by deep level transient spectroscopy using a two-phase lock-in amplifier (<i>I</i> <i>Q</i>-DLTS)

Abstract

A simple method of analyzing the deep level transient spectroscopy (DLTS) transient signal by recording its in-phase (I) and quadrature (Q) DLTS spectra using a two-phase lock-in amplifier with a sine wave mixing function, IQ-DLTS, is presented. Measurement of the peak positions on the I and Q spectra, which are simultaneously recorded during a single temperature scan, facilitates the calculation of the defect’s activation energy Et, and capture cross section σt, which are required for its identification. It was found that the Et values obtained when analyzing proton implantation-induced defects in GaAs were within 5% of those determined from the conventional DLTS Arrhenius plots.