Applied Physics Letters · 2001 · 65 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsMaterials PhysicsRecombinationAlloysInfrared Optical MaterialsInfrared SpectroscopySemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAlloy SemiconductorsAuger DecayAuger RecombinationBand GapConduction BandFermi LevelPump-probe SpectroscopyQuasi-fermi Levels
Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasing nitrogen composition, shifting the absorption edge to longer wavelengths. The conduction band dispersion also has an enhanced nonparabolicity, which suppresses Auger recombination. We have measured Auger lifetimes in alloys with 11 and 15 μm absorption edges using a time-resolved pump-probe technique. We find the lifetimes to be longer at room temperature than equivalent band gap Hg1−yCdyTe alloys at the same quasi-Fermi level separation. The results are explained using a modified k⋅p Hamiltonian which explicitly includes interactions between the conduction band and a higher lying nitrogen-related resonant band.
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Band Anticrossing in GaInNAs Alloys
W. Walukiewicz, Joel W. Ager, E. E. Haller et al. · Physical Review Letters · 1999 · 1.6K citations