Quasi-fermi Levels

Quasi-Fermi Levels is a theoretical construct in semiconductor physics that represents the effective energy levels for electrons and holes in a non-equilibrium state, serving as separate electrochemical potentials for each carrier type under applied bias or illumination, thereby generalizing the equilibrium Fermi level to account for population imbalances in carrier distributions.

477

Publications

30.6K

Citations

1.7K

Authors

495

Institutions

Publications per year

2017–2026

94

Variants

Quasi-fermi Level

Authors

1.7K

  1. DN
    Dieter Neher

    University of Potsdam, Germany

    11 publications · 2.2K citations

    11

    h-index

  2. MS
    Martin Stolterfoht

    University of Potsdam, Germany

    9 publications · 1.7K citations

    9

    h-index

  3. PM
    Peter M. Smowton

    Cardiff University, United Kingdom

    8 publications · 481 citations

    8

    h-index

  4. TU
    Thomas Unold

    Helmholtz-Zentrum Berlin für Materialien und Energie, Germany

    8 publications · 1.5K citations

    8

    h-index

  5. JG
    Jean‐François Guillemoles

    Centre National de la Recherche Scientifique, France

    8 publications · 487 citations

    8

    h-index

1–5 of 1.7K

Venues

  1. Journal of Applied Physics

    89 publications · 3.7K citations

    34

    h-index

  2. Applied Physics Letters

    50 publications · 3.7K citations

    29

    h-index

  3. IEEE Transactions on Electron Devices

    29 publications · 801 citations

    18

    h-index

  4. Physical review. B, Condensed matter

    PRB · 19 publications · 849 citations

    16

    h-index

  5. The Journal of Physical Chemistry C

    15 publications · 1.2K citations

    13

    h-index

1–5