Publication | Closed Access
A study of the linearity between Ion and logIoff of modern MOS transistors and its application to stress engineering
12
Citations
13
References
2007
Year
Device ModelingElectrical EngineeringEngineeringNanoelectronicsModern Mos TransistorsStress-induced Leakage CurrentApplied PhysicsBias Temperature InstabilityMicroelectronicsSemiconductor Device
| Year | Citations | |
|---|---|---|
Page 1
Page 1