V. Ho - Concepedia

Author

V. Ho

National University of Singapore ORCID

Also Known As

Ho Van Hoa, Hoa Van Ho, V. Ho, Van Hoa Ho

Publications

303

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Institute of Microelectronics Singapore Science Park Singapore-MIT Alliance for Research and Technology Nanyang Technological University

About

V. Ho is an author at National University of Singapore specializing in engineering, applied physics, and nanotechnology.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	236
2	Applied Physics	6	6	192
3	Electrical Engineering	4	4	119
4	Public Health	1	1	44
5	Geography	1	1	44

V. Ho

Publications

236

Citations

H-Index

Page 1

	Year	Citations
Resistive switching effects of HfO2 high-k dielectric M. Y. Chan, T. Zhang, V. Ho, Microelectronic Engineering Electrical EngineeringSemiconductor DeviceEngineeringApplied PhysicsTime-dependent Dielectric Breakdown	2008	64
Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure L.W. Teo, W. K. Choi, W. K. Chim, Applied Physics Letters EngineeringCharge Storage MechanismSemiconductor NanostructuresSemiconductorsTrilayer Structure	2002	56
Livelihood Vulnerability and Adaptation Capacity of Rice Farmers under Climate Change and Environmental Pressure on the Vietnam Mekong Delta Floodplains Dung Duc Tran, Châu Nguyễn Xuân Quang, Pham Duy Tien, Water EngineeringLand UseLivelihood VulnerabilityAgricultural EconomicsSustainable Development	2020	44
Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric Ting Hui Ng, W. K. Chim, W. K. Choi, Applied Physics Letters EngineeringTrilayer Memory StructureTrilayer StructuresRto Trilayer StructureTunneling Microscopy	2004	29
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure V. Ho, L.W. Teo, W. K. Choi, Applied Physics Letters Germanium ConcentrationEngineeringTrilayer Memory StructureRto Layer ThicknessNanocrystal Formation	2003	17
Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric Ting Hui Ng, V. Ho, L.W. Teo, Thin Solid Films Materials ScienceElectrical EngineeringEngineeringTunneling MicroscopyNanoelectronics	2004	14
A study of the linearity between Ion and logIoff of modern MOS transistors and its application to stress engineering W.S. Lau, Peizhen Yang, C. W. Eng, Microelectronics Reliability Device ModelingElectrical EngineeringEngineeringNanoelectronicsModern Mos Transistors	2007	12

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