V. Ho

Resistive switching effects of HfO2 high-k dielectric

M. Y. Chan, T. Zhang, V. Ho et al. · Microelectronic Engineering · 2008 · 64 citations

Electrical Engineering, Semiconductor Device, Engineering +5

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

L.W. Teo, W. K. Choi, W. K. Chim et al. · Applied Physics Letters · 2002 · 56 citations

Engineering, Charge Storage Mechanism, Semiconductor Nanostructures +16

Livelihood Vulnerability and Adaptation Capacity of Rice Farmers under Climate Change and Environmental Pressure on the Vietnam Mekong Delta Floodplains

Dung Duc Tran, Châu Nguyễn Xuân Quang, Pham Duy Tien et al. · Water · 2020 · 44 citations · Full text

Engineering, Land Use, Livelihood Vulnerability +23

Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

Ting Hui Ng, W. K. Chim, W. K. Choi et al. · Applied Physics Letters · 2004 · 29 citations

Engineering, Trilayer Memory Structure, Trilayer Structures +21

Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

V. Ho, L.W. Teo, W. K. Choi et al. · Applied Physics Letters · 2003 · 17 citations

Germanium Concentration, Engineering, Trilayer Memory Structure +19