L.W. Teo - Concepedia

Author

L.W. Teo

National University of Singapore

Also Known As

L. W. Teo, L.W Teo, L.W. Teo, Li-Ming Teo, Sharon GK Ong

Publications

379

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Singapore-MIT Alliance for Research and Technology Institute of Microelectronics Massachusetts Institute of Technology Singapore Science Park

About

L.W. Teo is an author at National University of Singapore specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	338
2	Applied Physics	7	7	281
3	Chemical Engineering	1	1	11
4	Chemistry	1	1	32
5	Computer Engineering	1	1	25

L.W. Teo

Publications

355

Citations

H-Index

Page 1

	Year	Citations
Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure W. K. Choi, W. K. Chim, C. L. Heng, Applied Physics Letters SemiconductorsMaterials ScienceTrilayer StructureSio2/sputtered Sio2Engineering	2002	139
Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure L.W. Teo, W. K. Choi, W. K. Chim, Applied Physics Letters EngineeringCharge Storage MechanismSemiconductor NanostructuresSemiconductorsTrilayer Structure	2002	56
Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask Z Chen, Yong Lei, Han Guan Chew, Journal of Crystal Growth Materials ScienceGermanium NanodotsEngineeringNanoporous MaterialNanomaterials	2004	32
Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric Ting Hui Ng, W. K. Chim, W. K. Choi, Applied Physics Letters EngineeringTrilayer Memory StructureTrilayer StructuresRto Trilayer StructureTunneling Microscopy	2004	29
Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices M. Ieong, J. Sudijono, J.-H. Ku, Electrical EngineeringSemiconductor DeviceEngineeringVlsi DesignAdvanced Packaging (Semiconductors)	2006	25
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure V. Ho, L.W. Teo, W. K. Choi, Applied Physics Letters Germanium ConcentrationEngineeringTrilayer Memory StructureRto Layer ThicknessNanocrystal Formation	2003	17
Resuscitation during the COVID-19 pandemic: Lessons learnt from high-fidelity simulation Wan Yen Lim, Patrick Wong, L.W. Teo, Resuscitation	2020	17
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure C. L. Heng, L.W. Teo, Vincent Ho, Microelectronic Engineering Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringApplied Physics	2003	15
Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric Ting Hui Ng, V. Ho, L.W. Teo, Thin Solid Films Materials ScienceElectrical EngineeringEngineeringTunneling MicroscopyNanoelectronics	2004	14
Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements W. K. Chim, K.M.-C. Wong, Y.T. Yeow, IEEE Electron Device Letters EngineeringMicroscopyChemical EngineeringOxide QualityElectron Microscopy	2003	11

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