L. Chan

Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Y. F. Chong, K. L. Pey, Andrew T. S. Wee et al. · Applied Physics Letters · 2000 · 81 citations

Engineering, Materials Engineering, Materials Science +15

Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations

Shyue Seng Tan, T. P. Chen, Jia Mei Soon et al. · Applied Physics Letters · 2003 · 72 citations

Natural Sciences, Materials Science, Physics +9

Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition

Shyue Seng Tan, T. P. Chen, C. H. Ang et al. · Applied Physics Letters · 2003 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability

Jian‐Bo Yang, T. P. Chen, Shyue Seng Tan et al. · Applied Physics Letters · 2006 · 38 citations

Engineering, Materials Engineering, Materials Science +16

Investigation of performance limits of germanium double-gated MOSFETs

Tony Low, Yunfei Hou, M.F. Li et al. · 2004 · 38 citations

Engineering, Electrical Engineering, Materials Science +13