Optical resolutions and chelating properties of (.+-.)-[2-(methylsulfinyl)ethyl]diphenylarsine and its phosphorus analog

Simon Y.M. Chooi, S. Y. Siah, Pak‐Hing Leung, +1

Inorganic Chemistry

Optical MaterialsEngineeringChemical AnalysisAltmetric Attention ScoreOrganic Chemistry +16

CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications

D. Shum, D. Houssameddine, S. T. Woo, +35

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +16

JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

V. B. Naik, K. Yamane, Tae Young Lee, +41

Fd-soi 40MbNon-volatile MemoryEngineeringIntegrated CircuitsMulti-channel Memory Architecture +14

22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

K. Lee, K. Yamane, V. B. Naik, +28

MagnetismElectrical Engineering22-Nm Fd-soi 40MbEngineeringVlsi Design +11

22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity

K. Lee, K. Yamane, S. M. Noh, +36

MagnetismElectrical EngineeringEnhanced Magnetic ImmunityEflash ApplicationsEngineering +13

Advanced MTJ Stack Engineering of STT-MRAM to Realize High Speed Applications

Tae Young Lee, K. Yamane, Y. Otani, +22

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureHardware Systems +16

40nm Embedded Self-Aligned Split-Gate Flash Technology for High-Density Automotive Microcontrollers

D. Shum, Lai Q. Luo, Yachen Kong, +28

Cmos Logic ProcessElectrical EngineeringEngineeringVlsi DesignHigh-density Automotive Microcontrollers +12

Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production

Tae Young Lee, K. Yamane, L. Y. Hau, +27

A study of the linearity between Ion and logIoff of modern MOS transistors and its application to stress engineering

W.S. Lau, Peizhen Yang, C. W. Eng, +5

Microelectronics Reliability

Device ModelingElectrical EngineeringEngineeringNanoelectronicsModern Mos Transistors +5

Effects of switching from 〈110〉 to 〈100〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors

Peizhen Yang, W. S. Lau, Seow Wei Lai, +3

Solid-State Electronics

SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering +8