David Vigar - Concepedia

Author

David Vigar

IMEC

Also Known As

D. Vigar, David Vigar

Publications

208

Citations

H-Index

Concepts

All Affiliations

IMEC Liverpool John Moores University Nanyang Technological University University of Glasgow American Rock Mechanics Association

About

David Vigar is an author at IMEC specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	91
2	Electrical Engineering	6	6	91
3	Applied Physics	4	4	55
4	Computer Engineering	2	2	36
5	Education	1	1	12

David Vigar

Publications

163

Citations

H-Index

Page 1

	Year	Citations
Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation Rui Gao, Azrif Manut, Zhigang Ji, IEEE Transactions on Electron Devices	2017	38
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging Meng Duan, J. F. Zhang, Zhigang Ji, IEEE Transactions on Electron Devices	2016	34
Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM Meng Duan, J. F. Zhang, Azrif Manut, Low BiasesHot CarrierElectrical EngineeringEngineeringHardware Reliability	2015	24
Stress migration reliability of wide CU interconnects with gouging vias Yeow Kheng Lim, R. Arijit, K. L. Pey, EngineeringMechanical EngineeringStress Migration ReliabilityResidual StressInterconnect (Integrated Circuits)	2005	15
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction Meng Duan, J. F. Zhang, J. C. Zhang, EngineeringLifetime PredictionCharge TransportSemiconductor DeviceHot Carrier	2017	15
Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering C. W. Eng, W.S. Lau, David Vigar, Applied Physics Letters Device ModelingPocket ImplantElectrical EngineeringEngineeringPhysics	2005	13
A study of the linearity between Ion and logIoff of modern MOS transistors and its application to stress engineering W.S. Lau, Peizhen Yang, C. W. Eng, Microelectronics Reliability Device ModelingElectrical EngineeringEngineeringNanoelectronicsModern Mos Transistors	2007	12
Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math> </inline-formula> Azrif Manut, Rui Gao, J. F. Zhang, IEEE Transactions on Electron Devices Low-power ElectronicsDevice VariationsElectrical EngineeringEngineeringMeasurement	2019	12

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