Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Abstract

We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.