C. Zhou

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

J. Rodriguez, K. Remack, J. Gertas et al. · 2010 · 58 citations

Non-volatile Memory, Engineering, Cu Cmos Platform +17

Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology

Krishna Udayakumar, Tamer San, J. Antonio Travieso-Rodríguez et al. · 2013 · 24 citations

Non-volatile Memory, Engineering, Reliable Embedded Memory +18

Yield prediction using critical area analysis with inline defect data

C. Zhou, R. Ross, Carl Vickery et al. · 2003 · 16 citations

Engineering, Industrial Engineering, Yield Prediction +16

Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology

B. Dahl, J. Cruz-Colon, R. Baumann et al. · 2015 · 15 citations

Non-volatile Memory, Electrical Engineering, Total Ionizing Dose +15

High Temperature Data Retention of Ferroelectric Memory on 130nm and 180nm CMOS

J. Antonio Travieso-Rodríguez, C. Zhou, Thomas Gräf et al. · 2016 · 11 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17