Measurement of intrinsic capacitances of MOS transistors

J.J. Paulos, D.A. Antoniadis, Y. Tsividis

1982 · 22 citations · 2 references

Concepts

Abstract

An electrometer/coulombmeter circuit technique to measure capacitance characteristics of the MOS transistor will be discussed. Experimental data for substrate capacitances, non-reciprocal elements and non-quasi-static effects, compared to theory, will be presented.

References

2