Japanese Journal of Applied Physics · 1983 · 55 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsMetal OxidesOxide SemiconductorsSemiconductor NanomaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsSemiconductor Oxide Thin FilmsThin Oxide FilmsTransparent Conducting FilmsTransparent Conducting MaterialsTransparent Conductive FilmsTransparent Conductive OxidesX-ray Diffraction AnalysisZinc Oxides
Zinc oxide thin films with the resistivity of 5×10 -3 Ω·cm and the transparency of above 80% at the wavelength between 400 and 800 nm have been prepared by conventional rf sputtering in pure argon from a zinc oxide target. A close relation of their electrical characteristics with crystallographic characteristics is found using X-ray diffraction analysis. The low resistivity films consist of very small crystal grains, the c-axis of which is not preferentially oriented or is weakly oriented parallel to the substrate surface.
5