Applied Physics Letters · 2006 · 36 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMemory DevicesNanoelectronicsOxide SemiconductorsQuantum DotsSemiconductor PhysicsSemiconductor ReliabilityActivation EnergyConduction BandElectronic Trap StatesFlash MemoryFlash Memory DevicesFloating-gate MemoryTemperature DependenceTrap States
In this letter, we have studied the temperature dependence of retention time of SiGe dot floating-gate flash memory with different tunnel oxide thicknesses, and compared the difference of the activation energy between them. The results showed that the electrons are stored in the deep trap states in semiconductor quantum dot floating gate after programing, and those states are localized at few hundred meV below the semiconductor conduction band.
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A silicon nanocrystals based memory
Sandip Tiwari, Farhan Rana, Hussein Hanafi et al. · Applied Physics Letters · 1996 · 1.6K citations