Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs

D. E. Aspnes, J. P. Harbison, A. A. Studna et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 509 citations

Natural Sciences, Materials Science, Physics +17

Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

D. E. Aspnes, A. A. Studna · Physical Review Letters · 1985 · 427 citations

Natural Sciences, Materials Science, Physics +12

Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

J.‐T. Zettler · Progress in Crystal Growth and Characterization of Materials · 1997 · 122 citations

Natural Sciences, Materials Engineering, Materials Science +14

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

J.‐T. Zettler, K. Haberland, M. Zorn et al. · Journal of Crystal Growth · 1998 · 57 citations

Natural Sciences, Materials Engineering, Materials Science +12

Spectroscopic process sensors in MOVPE device production

K. Haberland, P. Kurpas, Markus Pristovsek et al. · Applied Physics A · 1999 · 36 citations

Engineering, Materials Engineering, Materials Science +14