Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation

Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl species

F. R. McFeely, J. F. Morar, N. D. Shinn et al. · Physical review. B, Condensed matter · 1984 · 205 citations

Engineering, Chemistry, Fluorine Attack +16

Self-limited layer-by-layer etching of Si by alternated chlorine adsorption and Ar+ ion irradiation

Takashi Matsuura, Junichi Murota, Yasuji Sawada et al. · Applied Physics Letters · 1993 · 113 citations

Materials Science, Chemical Engineering, Engineering +15

Practical surface analysis—by Auger and X-ray photoelectron spectroscopy

J. Comyn · International Journal of Adhesion and Adhesives · 1984 · 56 citations

Materials Science, Surface Characterization, Engineering +5

Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas

Junichi Murota, Masao Sakuraba, Shoichi Ono · Applied Physics Letters · 1993 · 43 citations

Engineering, Sih4 Gas, Chemistry +17

Electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing

Koichi Fukuda, Junichi Murota, Shoichi Ono et al. · Applied Physics Letters · 1991 · 30 citations · Full text

Substrate Heating, Engineering, Ultraclean Processing +18