Masao Sakuraba - Concepedia

Author

Masao Sakuraba

Tohoku University ORCID

Also Known As

M Sakuraba, M. SAKURABA, M. Sakuraba, Masao SAKURABA, Masao Sakuraba, Sakuraba, M.

218

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Tohoku University Systems Research Institute Spintronics Research Network of Japan Institut für Solartechnologien (Germany)Physical Devices (United States)

About

Masao Sakuraba is an author at Tohoku University specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	36	787
2	Applied Physics	17	37	786
3	Chemistry	11	11	306
4	Chemical Engineering	5	5	146
5	Natural Sciences	1	1	16

Masao Sakuraba

Publications

868

Citations

H-Index

Page 1

	Year	Citations
Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition Junichi Murota, Masao Sakuraba, Bernd Tillack Japanese Journal of Applied Physics Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringCrystalline Defects	2006	84
Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas Junichi Murota, Masao Sakuraba, Shoichi Ono Applied Physics Letters EngineeringSih4 GasChemistryChemical DepositionSilicon On Insulator	1993	43
Atomically controlled processing for group IV semiconductors Junichi Murota, Takashi Matsuura, Masao Sakuraba Surface and Interface Analysis SemiconductorsIi-vi SemiconductorEngineeringCrystalline DefectsSurface Chemistry	2002	41
Stability of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition Masao Sakuraba, Junichi Murota, Shoichi Ono Journal of Applied Physics Materials ScienceChemical EngineeringEngineeringDimer StructureSurface Science	1994	39
Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures Takeshi Watanabe, Akihiro Ichikawa, Masao Sakuraba, Journal of The Electrochemical Society Atomic‐order NitridationEngineeringSurface ChemistrySurface ScienceApplied Physics	1998	35
Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations Junichi Murota, Masao Sakuraba, Bernd Tillack Advances in Natural Sciences Nanoscience and Nanotechnology Cvd ProcessingUltra-large-scale IntegrationsEngineeringDevice IntegrationChemical Deposition	2012	35
Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition Yosuke Shimamune, Masao Sakuraba, Takashi Matsuura, Applied Surface Science Chemical EngineeringEngineeringNanotechnologySurface ScienceApplied Physics	2000	28
Effects of interfacial chemical states on the performance of perovskite solar cells Teng Ma, Daisuke Tadaki, Masao Sakuraba, Journal of Materials Chemistry A Materials ScienceEngineeringPerovskite Solar CellSurface ChemistrySurface Science	2016	27
Thermal nitridation of ultrathin SiO <sub>2</sub> on Si by NH <sub>3</sub> Osamu Jintsugawa, Masao Sakuraba, Takashi Matsuura, Surface and Interface Analysis	2002	26
Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases Masao Sakuraba, Junichi Murota, Takeshi Watanabe, Applied Surface Science Electrical EngineeringEpitaxial GrowthSih4 GasesEngineeringPhysics	1994	24

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