Atomically controlled processing for group IV semiconductors

Abstract

Abstract Atomic‐order surface reaction processes on the group IV semiconductor surface are formulated based on the Langmuir‐type surface adsorption and reaction scheme. In in situ doped Si 1− x Ge x epitaxial growth on the (100) surface in an SiH 4 –GeH 4 –dopant (PH 3 , B 2 H 6 or SiH 3 CH 3 )–H 2 gas mixture, the deposition rate, the Ge fraction and the dopant concentration are explained quantitatively by assuming that the reactant gas adsorption/reaction depends on the surface site materials and that the dopant incorporation in the grown film is conducted by Henry's law. The self‐limiting formation of 1–3 monolayers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH 4 , GeH 4 , NH 3 , PH 3 , CH 4 and SiH 3 CH 3 ) on Si(100) and Ge(100) is also generalized based on the Langmuir‐type model. The Si epitaxial growth over the phosphorus layer already formed on Si(100) by PH 3 treatment is achieved. Moreover, atomic layer‐by‐layer etching of Si and Ge is achieved by alternate chlorine supply and irradiation of low‐energy Ar + ions, where the chlorine adsorption is described by the Langmuir‐type model. Silicon nitride is also etched layer by layer via a role‐share method with an argon and hydrogen mixed plasma. These results open the way to atomically controlled processing for ultra‐large‐scale integration. Copyright © 2002 John Wiley & Sons, Ltd.