Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Engineering, Electrical Engineering, Materials Science +16

Excitonic absorption edge of indium selenide

J. Camassel, P. Merle, H. Mathieu et al. · Physical review. B, Condensed matter · 1978 · 249 citations

Natural Sciences, Materials Science, Physics +17

Scattering of carriers by ionized impurities in semiconductors

F. J. Blatt · Journal of Physics and Chemistry of Solids · 1957 · 136 citations

Engineering, Electrical Engineering, Materials Science +12

Large InSe monocrystals grown from a non-stoichiometric melt

A. Chévy, A. Kuhn, Michaela Martin · Journal of Crystal Growth · 1977 · 121 citations

Natural Sciences, Materials Engineering, Materials Science +10

Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe

E. Kress-Rogers, R. J. Nicholas, J. C. Portal et al. · Solid State Communications · 1982 · 118 citations

Natural Sciences, Materials Science, Physics +14