Silicon strained layers grown on GaP(001) by molecular beam epitaxy

Abstract

Mismatch-induced lattice strain in thin Si films grown by molecular beam epitaxy on GaP(001) substrates has been measured using transmission electron microscopy, Raman spectroscopy, and Rutherford backscattering. The perpendicular strain in the topmost part of the layers is found to be enhanced in comparison to elasticity theory. Relaxation of the strain occurs by the formation of misfit dislocations at significantly larger thickness than predicted by equilibrium theory.