Trench filling characteristics of low stress TEOS/ozone oxide deposited by PECVD and SACVD

High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology

Farrokh Ayazi, K. Najafi · Journal of Microelectromechanical Systems · 2000 · 169 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

K. Fujino, Yuko Nishimoto, N. Tokumasu et al. · Journal of The Electrochemical Society · 1990 · 120 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

Tetsuya Homma · Materials Science and Engineering R Reports · 1998 · 110 citations

Natural Sciences, Electrical Engineering, Materials Science +16

Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasmas

Hideo Sugai, K. Nakamura, Keiji Suzuki · Japanese Journal of Applied Physics · 1994 · 76 citations · Full text

Natural Sciences, Electrical Engineering, Physics +15

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Iqbal Shareef, Gary W. Rubloff, M. Anderle et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +13