Journal of Applied Physics · 1978 · 77 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsTransport PhenomenaCarrier TransportElectronic Transport ModelingEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsElectromigrationEpitaxial Growth KineticsGrowth KineticsGrowth VelocityLiquid Phase EpitaxyMass Transport EffectsMass Transport PhenomenaPeltier Effect
On the basis of mass-transport principles, a theoretical model of electroepitaxial growth—current-controlled liquid-phase epitaxy—was developed which defines the contribution of the Peltier effect (at the solid-solution interface) and that of solute electromigration to the overall growth process. According to the model, the contribution of electromigration to growth is dominant in the absence of convection in the solution, whereas the contribution of the Peltier effect can be dominant in the presence of convection. On the basis of the model, expressions were derived which relate quantitatively the growth velocity to growth parameters. The model was found to be in excellent agreement with extensive experimental data on the electroepitaxial growth of GaAs from a Ga-As solution.
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Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet
D. L. Rode · Journal of Crystal Growth · 1973 · 131 citations