Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 26 citations · 0 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsPlasma PhysicsSemiconductor DevicesDevice SimulationDopingIntegrated Circuit DesignIon ImplantationPlasma SheathsSurface ChargeCharge AccumulationImplantation Profile ModelingIon Implantation EffectsIon Implantation SimulationPlasma Immersion Ion ImplantationSemiconductor Doping ProfilesSurface Charging
The charging effects of plasma immersion ion implantation (PIII) doping experiments have been investigated using a dynamic sheath model and PDP1 plasma simulation code. When the target has a dielectric film, charge accumulation during PIII can have a profound impact on doping results. Under certain process conditions, it can significantly reduce implant energy and dose and thereby alter the implant profile. In addition, it may degrade device reliability, especially for ultralarge-scale integrated circuit devices. In order to minimize charging effects, shorter pulse widths along with moderate values of plasma density and pulse potential should be used.