Applied Physics Letters · 2009 · 17 citations · 15 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOrganic Electronic MaterialsOrganic SemiconductorsThin-film TransistorsCharge TrappingCharge Trapping EffectsErase CyclingNonvolatile MemoryNonvolatile Memory DevicesOrganic ElectronicsOrganic Field-effect TransistorsOrganic Memory Devices
We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.
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Melissa Mushrush, Antonio Facchetti, Michael Lefenfeld et al. · Journal of the American Chemical Society · 2003 · 385 citations