Applied Physics Letters · 1976 · 50 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingIntegrated Circuit DesignIntegrated Circuit FabricationIon ImplantationSemiconductor Device MaterialsSemiconductor InterfacesActivationAnnealingDopant ImplantationIon Implantation EffectsPost-implantation AnnealingSchottky Barriers
A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material.
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Photoluminescence of Cu-Doped Gallium Arsenide
H. J. Queisser, C. S. Fuller · Journal of Applied Physics · 1966 · 138 citations