Luminescence studies of a new line associated with germanium in GaAs

Abstract

A luminescence line has been observed at 1·454 ev at 20°K in germanium-doped GaAs. Measurements have been made of the peak energy, intensity and half-width as a function of temperature. It is proposed that the centre responsible for the luminescence is an arsenic vacancy bound to a germanium atom on an arsenic site. Preliminary results indicate that a similar centre is present in silicon-doped GaAs grown from a gallium solution.