A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Demonstration of an SiC neutron detector for high-radiation environments

S. R. Seshadri, A.R. Dulloo, F.H. Ruddy et al. · IEEE Transactions on Electron Devices · 1999 · 136 citations

Engineering, Electrical Engineering, Nuclear Engineering +17

Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation

René Stein, P. Lanig, S. Leibenzeder · Materials Science and Engineering B · 1992 · 88 citations

Natural Sciences, Materials Engineering, Materials Science +14

The thermal neutron response of miniature silicon carbide semiconductor detectors

A.R. Dulloo, F.H. Ruddy, J.G. Seidel et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2003 · 82 citations

Engineering, Nuclear Engineering, Physics +14

Determination of doping levels and their distribution in SiC by optical techniques

Peter J. Wellmann, Roland Weingärtner · Materials Science and Engineering B · 2003 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +14

Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

D.J. Morrison, Nicolas G. Wright, Alton B. Horsfall et al. · Solid-State Electronics · 2000 · 19 citations

Engineering, Electrical Engineering, Materials Science +15