Applied Physics Letters · 1981 · 44 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsNanoelectronicsQuantum TunnelingSemiconductor Device MaterialsSuperconducting Thin FilmsWide Band Gap SemiconductorsAmorphous SiliconAmorphous Thin FilmsJosephson JunctionsJosephson TunnelingNbn Thin FilmsNitride Thin FilmsSputteringTunnel Junctions
High-quality NbN/NbN Josephson tunnel junctions have been fabricated by rf sputtering. Tunneling barriers are formed by oxidizing amorphous silicon films produced with rf glow discharge deposition. For patterning the base and counter electrode, sputtered ZnO films are employed as a resist mask. The juncitons are found to have large gaps (2ΔNbN) =4.4 mV), to have low leakage current, and to be quite stable for storage and thermal cyclings.
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Tunneling Between Superconductors
Vinay Ambegaokar, A. Baratoff · Physical Review Letters · 1963 · 2.2K citations