Electronics Letters · 1981 · 19 citations · 2 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCarrier TransportDiffusion In SolidsSemiconductor PhysicsThermal Properties Of SemiconductorsAtomic DiffusionDiffusion In SemiconductorsDiffusion KineticsDiffusion MechanismsTemperature Dependence Of Diffusion
A technique is presented for studying the diffusion of iron and chromium in GaAs and InP at temperatures down to 600°C. The technique is reproducible, and results are presented which show that in all four cases very fast diffusion occurs.
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