Effect of iso-electronic dopants on the dislocation density of GaAs

Physics of III–V compounds

William Dunlap · Solid-State Electronics · 1965 · 320 citations

Inorganic Chemistry, Engineering, Physics +5

Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs

D. E. Holmes, R. T. Chen, K. Elliott et al. · Applied Physics Letters · 1982 · 291 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors

J. A. Van Vechten · Journal of The Electrochemical Society · 1975 · 195 citations

Engineering, Common Semiconductors, Single Vacancy Formation +19

Dislocation-free GaAs and InP crystals by isoelectronic doping

Guy Jacob, M. Duseaux, J. Farges et al. · Journal of Crystal Growth · 1983 · 154 citations

Semiconductors, Engineering, Applied Physics +3

Mechanism for dislocation density reduction in GaAs crystals by indium addition

Hannelore Ehrenreich, J. P. Hirth · Applied Physics Letters · 1985 · 127 citations

Gaas Crystals, Hardening Entity, Engineering +19