Dislocation-Impurity Interactions is a materials science phenomenon in which solute atoms or impurities selectively segregate to and elastically or electrostatically interact with dislocation strain fields in semiconductors, thereby modifying dislocation mobility, electronic activity, and overall crystal plasticity.
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221
Scattering of electrons at threading dislocations in GaN
Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations
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220
Tohoku University
Sendai, Japan
11 h-index
27 publications
1.1K citations
University of Exeter
Exeter, United Kingdom
8 h-index
21 publications
576 citations
The University of Tokyo
Tokyo, Japan
7 h-index
16 publications
518 citations
Kanazawa University
Kanazawa, Japan
5 h-index
12 publications
218 citations
Polish Academy of Sciences
Warsaw, Poland
5 h-index
13 publications
602 citations
University of Oxford
Oxford, United Kingdom
5 h-index
13 publications
535 citations
Luleå University of Technology
Luleå, Sweden
5 h-index
5 publications
136 citations
FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic
Prague, Czechia
5 h-index
11 publications
185 citations
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- Journal of Applied Physics
33 publications · 2.5K citations
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- Applied Physics Letters
11 publications · 376 citations
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- physica status solidi (a)
11 publications · 326 citations
11
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- Acta Metallurgica
9 publications · 637 citations
9
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- Journal of Nuclear Materials
9 publications · 251 citations
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