Applied Physics Letters · 2011 · 38 citations · 18 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsElectronic Band StructureElectronic Material CharacterizationElectronic SpectroscopyOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor PhysicsBand GapElectronic Band GapElectronic Transition AssignmentInorganic SemiconductorsOptical TransitionsValence BandValence Band StructureValence-band Spectroscopy
Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.
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Band Anticrossing in GaInNAs Alloys
W. Walukiewicz, Joel W. Ager, E. E. Haller et al. · Physical Review Letters · 1999 · 1.6K citations
Molecular beam epitaxy growth of GaAs1−xBix
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Natural Sciences, Materials Engineering, Materials Science +17
Band gap of GaAs1−xBix, 0<x<3.6%
S. Francoeur, M. J. Seong, A. Mascarenhas et al. · Applied Physics Letters · 2003 · 427 citations