Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate

InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Edward Yi Chang, Chien-I Kuo, Heng‐Tung Hsu et al. · Applied Physics Express · 2013 · 118 citations

Engineering, Electrical Engineering, Materials Science +16

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, G. Alestig, J. Halonen et al. · IEEE Electron Device Letters · 2012 · 116 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

W.R. Deal, K.M.K.H. Leong, V. Radisic et al. · IEEE Microwave and Wireless Components Letters · 2011 · 106 citations

Engineering, Electrical Engineering, Microelectronics +16

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al. · IEEE Transactions on Electron Devices · 2012 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

4–12- and 25–34-GHz Cryogenic mHEMT MMIC Low-Noise Amplifiers

B. Aja, M. Seelmann‐Eggebert, Daniel Bruch et al. · IEEE Transactions on Microwave Theory and Techniques · 2012 · 42 citations

Engineering, Electrical Engineering, Microelectronics +16