Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE - Concepedia

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Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

15

Citations

25

References

2014

Year

Partha Mukhopadhyay, Ankush Bag, U P Gomes, Utsav Banerjee, Saptarsi Ghosh, Sanjib Kabi, Edward Yi Chang, A. M. Dabiran, Peter Chow, Dhrubes Biswas

Journal of Electronic Materials

Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesApplied PhysicsAluminum Gallium NitrideGan Power DeviceOptoelectronicsAlgan/gan Hemts Grown

References

	Year	Citations

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