Sanjib Kabi

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Sanjay Kumar Jana, Partha Mukhopadhyay, Saptarsi Ghosh et al. · Journal of Applied Physics · 2014 · 36 citations

Materials Science, Semiconductors, Electrical Engineering +12

Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot

Sanjib Kabi, A. G. U. Perera · Journal of Applied Physics · 2015 · 33 citations

Quantum Photonics, Engineering, Intersublevel Transitions +19

2DEG modulation in double quantum well enhancement mode nitride HEMT

Ankush Bag, Palash Das, Rahul Kumar et al. · Physica E Low-dimensional Systems and Nanostructures · 2015 · 24 citations

Categoryquantum Electronics, Photonics, Electrical Engineering +6

Calculations for the band lineup of strained InxGa1−xN/GaN quantum wells: Effects of strain on the band offsets

Tapas Das, Sanjib Kabi, Dipankar Biswas · Journal of Applied Physics · 2009 · 24 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +12

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Partha Mukhopadhyay, Ankush Bag, U P Gomes et al. · Journal of Electronic Materials · 2014 · 15 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6