Dhrubes Biswas

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

Saptarsi Ghosh, Subhashis Das, Syed Mukulika Dinara et al. · IEEE Transactions on Electron Devices · 2018 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Syed Mukulika Dinara, Sanjay Kr. Jana, Saptarsi Ghosh et al. · AIP Advances · 2015 · 30 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

Rahul Kumar, Ankush Bag, Partha Mukhopadhyay et al. · Applied Surface Science · 2015 · 30 citations

Engineering, Electrical Engineering, Materials Science +14

Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

Subhashis Das, Saptarsi Ghosh, Rahul Kumar et al. · IEEE Transactions on Electron Devices · 2017 · 27 citations

Engineering, Materials Engineering, Materials Science +17

2DEG modulation in double quantum well enhancement mode nitride HEMT

Ankush Bag, Palash Das, Rahul Kumar et al. · Physica E Low-dimensional Systems and Nanostructures · 2015 · 24 citations

Natural Sciences, Materials Science, Physics +14