Bilayer Resist Method for Room-Temperature Nanoimprint Lithography

Abstract

A compact nanoimprint lithography (NIL) apparatus using the driving power of a servomotor has been newly developed. A bilayer resist method using hydrogen silsequioxane (HSQ) as a top layer and AZ photoresist as a bottom layer has been proposed to achieve high-aspect resist patterns on a nonflat surface for room-temperature nanoimprint lithography (RT-NIL). The etching rate ratio of HSQ to AZ photoresist was higher than 100 for O 2 reactive ion etching (RIE), indicating that the HSQ top layer has sufficient etching tolerance. We have achieved the high-aspect nanostructure patterns of 100-nm-linewidth and 1-µm-height using the NIL apparatus developed here.