Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor - Concepedia

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Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

18

Citations

9

References

2000

Year

Frank Brunner, T. Bergunde, E. Richter, P. Kurpas, M. Achouche, A. Maaßdorf, Joachim Würfl, M. Weyers

Journal of Crystal Growth

Electrical EngineeringEngineeringGaas Base LayerApplied PhysicsHeterojunction Bipolar TransistorsCompound SemiconductorSemiconductor Device

References

	Year	Citations

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