Journal of Applied Physics · 1980 · 61 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSolid State PhysicsSemiconducting MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsDiffusion CoefficientsHigh-temperature SuperconductorsSuperlattice GrowthSuperlattice MaterialsSuperlattice Structure AnalysisSuperlattices
The PbTe-Pb0.8Sn0.2Te superlattices were made by the hot wall technique on BaF2 substrates. Two superlattices with the period thickness of 100 and 200 Å were analyzed by sputtering-Auger electron spectroscopy and good results were obtained. The interdiffusions of Pb and Sn across the junction were also investigated and the diffusion coefficients of Pb and Sn at 300 °C were found to be 1.8 and 2.9×10−17 cm2/sec, respectively.
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A new semiconductor superlattice
G.A. Sai-Halasz, Raphael Tsu, L. Esaki · Applied Physics Letters · 1977 · 564 citations
A one-dimensional SiGe superlattice grown by UHV epitaxy
E. Kasper, H.-J. Herzog, H. Kibbel · Applied Physics A · 1975 · 251 citations
Growth of Periodic Structures by the Molecular-Beam Method
A. Y. Cho · Applied Physics Letters · 1971 · 146 citations