Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET's

Abstract

films were nitrided in an ambient or an plasma between 925° and 1050°C for less than 2 hr. From the etching and the oxidation properties, along with the Auger analysis, the resulting film composition was determined and the reaction kinetics were postulated. Capacitors and n‐channel MOSFET's were fabricated on the nitrided‐oxide films. Effects of the nitridation step on the interfacial characteristics were examined.