Amorphous Silicon Superlattice Thin Film Transistors

Abstract

A new type of thin film transistor (TFT) has been fabricated using hydrogenated amorphous silicon (a-Si:H)/silicon nitride (a-Si 1- x N x :H) multilayer structures. The field effect mobility of the superlattice TFT was 0.74 cm 2 /Vs, while that of an a-Si:H TFT with the active layer produced by the same deposition conditions as the superlattice was 0.13 cm 2 /Vs. The increase in the field effect mobility for the superlattice was interpreted in terms of the quantum size effects in the a-Si:H potential well.