Air-Gap Through-Silicon Vias

Abstract

This letter reports for the first time the fabrication and characterization of through-silicon vias (TSVs) using air-gap insulators to enable high-performance 3-D integration. To address the challenge in fabricating extremely high-aspect-ratio air gaps, a CMOS-compatible sacrificial technology based on pyrolysis of poly (propylene carbonate) has been developed, upon which air-gap TSVs have been successfully achieved. The measured capacitance density and leakage current density of air-gap TSVs are 1.22 nF/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 10 nA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , respectively, about one order and two orders lower in magnitude than TSVs using SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> insulators.