Applied Physics Letters · 1985 · 16 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCross-sectional MicroscopyDislocation SubstructuresDislocationsDislocations In Epitaxial FilmsHigh-speed Logic DesignMisfit DislocationsMolecular Beam EpitaxyTransmission Electron Microscopy Of Dislocations
Epitaxial GaAs has been grown on Ga0.47In0.53As by molecular beam epitaxy to form a lattice-mismatched Schottky barrier gate for field-effect transistor applications. The study of cross-sectional transmission electron microscopy shows that the misfit dislocations accommodating the 3.7% lattice mismatch between these two materials are confined in a GaAs interfacial layer of 300–400-Å thickness. As a result of significant reduction in dislocation densities, Schottky barrier gates made on a sample having a 960-Å-thick GaAs layer exhibit reverse leakage currents two orders of magnitude lower than those made on a sample with a 580-Å-thick GaAs layer. This approach looks promising for fabricating Ga0.47In0.53As field-effect transistors for optoelectronic integration as well as high-speed logic applications.
4