Applied Physics Letters · 1990 · 12 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsDopingIii-v SemiconductorsP-n JunctionsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsDoping In Thin FilmsJunction FabricationJunction Ideality FactorLangmuir-blodgett DepositionReverse Bias CharacteristicsSemiconductor CharacterizationSemiconductor DopingSemiconductor Junctions
A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir–Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm−3) shallow (xj ≊0.1–0.4 μm), p+-n junctions are obtained. Mesa-type p-i-n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.
8
An applied science perspective of Langmuir-Blodgett films
G.G. Roberts · Advances In Physics · 1985 · 413 citations
The physics of Langmuir-Blodgett films
R.H. Tredgold · Reports on Progress in Physics · 1987 · 97 citations