Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Engineering, Electrical Engineering, Materials Science +16

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

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An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Lewis M. Terman · Solid-State Electronics · 1962 · 1.4K citations

Engineering, Materials Engineering, Materials Science +14

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations