Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111) Si

Abstract

We have investigated epitaxial growth of HfN film and sequential single-oriented growth of Al/HfN bilayered film on (001) Si and (111) Si. Stoichiometric HfN film was prepared on Si by reactive sputtering using an ultrahigh-vacuum dc magnetron sputtering system. Orientational epitaxy and crystal structure of HfN film deposited on Si were investigated by X-ray pole figure measurement and X-ray diffraction analysis, respectively. Then, Al film was sputter-deposited on the HfN/Si system in the same sputtering chamber without breaking vacuum, and sequential single-oriented growth of Al/HfN bilayered film was examined by X-ray diffraction. It is revealed that the HfN films deposited on Si grow epitaxially with the directional relationships of HfN (001) [110] ∥Si (001) [110] and HfN (111) [002] ∥Si (111) [002], and (100) and (111) Al films also grow in a single-oriented state on epitaxial (001) and (111) HfN films.