High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate-transfer technique

Abstract

Reproducible growth of high quality InGaAs(Fe) by liquid phase epitaxy has been achieved by using long pregrowth bakes and a substrate-transfer apparatus. A mixed conduction model with fixed electron and hole mobilities is shown to explain the large variation of transport properties with Fe doping. This model predicts a maximum resistivity of 2500 Ω cm, and samples with resistivities within 5% of this value have been grown.